Electro-physical properties of γ-exposed crystals of silicon and germanium
The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep levels of radiation defects in the forbidden band of silicon and germanium, w...
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| Date: | 1999 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117933 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electro-physical properties of γ-exposed crystals of silicon and germanium / Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 47-55. — Бібліогр.: 63 назв. — англ. |