Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation
The results of researches of the kinetic effects in crystals CdSb are presented and discussed.
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| Дата: | 2007 |
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| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117996 |
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| Цитувати: | Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation / A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 17-18. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117996 |
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irk-123456789-1179962017-05-28T03:04:59Z Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation Fedosov, A.V. Koval, Y.V. Jashchinskij, L.V. Kovalchuk, O.V. The results of researches of the kinetic effects in crystals CdSb are presented and discussed. 2007 Article Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation / A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 17-18. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 61.80.-x, 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/117996 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| language |
English |
| description |
The results of researches of the kinetic effects in crystals CdSb are presented
and discussed. |
| format |
Article |
| author |
Fedosov, A.V. Koval, Y.V. Jashchinskij, L.V. Kovalchuk, O.V. |
| spellingShingle |
Fedosov, A.V. Koval, Y.V. Jashchinskij, L.V. Kovalchuk, O.V. Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Fedosov, A.V. Koval, Y.V. Jashchinskij, L.V. Kovalchuk, O.V. |
| author_sort |
Fedosov, A.V. |
| title |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation |
| title_short |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation |
| title_full |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation |
| title_fullStr |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation |
| title_full_unstemmed |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation |
| title_sort |
characteristics of the dependences of mobility and concentration of charge carriers in monocrystals cdsb(in) after γ-irradiation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117996 |
| citation_txt |
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation / A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 17-18. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007. V. 10, N 3. P. 17-18.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
17
PACS 61.80.-x, 72.20.Jv
Characteristics of the dependences of mobility
and concentration of charge carriers
in single crystals CdSb(In) after γ-irradiation
A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk
Lutsk State Technical University, Department of Physics,
75, Lvivska str., 43018 Lutsk, Ukraine; e-mail: jura_koval@gala.net
Abstract. The results of researches of the kinetic effects in crystals CdSb are presented
and discussed.
Keywords: crystal CdSb, kinetic effects, electrophysical properties, charge carriers.
Manuscript received 07.02.07; accepted for publication 27.09.07; published online 31.10.07.
The nature of radiation defects and the character of
changes of the electrophysical properties of crystals at
their irradiation are determined by factors depending on
both the properties of irradiated crystals and the doses of
irradiation.
In the given work, the kinetic parameters of single
crystals of antimonide cadmium alloyed by indium are
researched before and after γ-irradiation. The measu-
rements were conducted on the specimens cut out in
basic crystallographic directions. We have studied the
specific conductivity and Hall’s effect, which allows us
to get the dose and temperature dependences of the
concentration of charge carriers and their mobility.
The dependence of the concentration of charge
carriers on the dose of irradiation is presented in Fig. 1.
As can be seen, the changes of the concentration with a
dose at room temperature (curve 1, Fig. 1) have a poorly
expressed character, because they are the function of the
initial concentration of the In admixture [1, 2].
As distinct from the case of room temperature, the
dependence of the concentration of charge carriers on
the dose of irradiation at 78 K (curve 2, Fig. 1) has a
more pronounced character. We refer the concentration
decrease, i.e. the removal of electrons from the area of
conductivity, to the increase of the concentration of
radiation defects with a deep level lying in the forbidden
band of CdSb(In). According to the data of the
temperature dependences of the charge carrier concen-
tration in γ-irradiated crystals (Fig. 2), we assume that
the energy level Ec = 0.3 eV is responsible for the
removal of charge carriers.
The dependences of the charge carrier mobility on
the γ-irradiation dose, µ = ƒ(Ф), are presented in Fig. 3.
We see the presence of the maximum at the dose of
4·1018 γ-quantum/cm2. We associate the increase of the
charge carrier mobility up to a dose of 4·1018 γ-
quantum/cm2 with the insertion of radiation-induced
centers which originate near positively charged
admixture (In) ions, where the probability of their
appearance is greater because of strains of the lattice
near the admixture centers. As a result, the ”neutra-
lization” of admixture ions happens, by leading to a
decrease of the Rutherford scattering by the partly
”neutralized” centers, i.e. to the increase of µ.
Such an explanation can have a place because the
probability of the appearance of radiation-induced
damages in the strained crystal areas is much higher than
that in the relaxed areas [3]. That is why it is natural to
expect that, under the low-dose irradiation, the insertion
of defects happens mainly in the locally strained areas of
the lattice, i.e. near atoms of the dopant (In). This leads
finally to the increase of the carrier mobility µ, which is
observed in the experiment.
Fig. 1. Dose dependence of the concentration of charge carriers
in single crystals CdSb(In): 1 −at 293 K; 2 − at 78 K.
0
1
2
3
4
0 1 2 3 4 5
1017
1016
1015
1014
1
2
Ф⋅10-18 γ-quantum/cm2
n, cm-3
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007. V. 10, N 3. P. 17-18.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
18
Fig. 2. Temperature dependence of the charge carrier con-
centration in single crystals CdSb(In): 1 – before irradiation;
2 – after an irradiation dose of 4·1018 γ-quantum/cm2.
Fig. 3. Dose dependences of the charge carrier mobility in
single crystals CdSb(In): 1 − at 78 K; 2 − at 293 K.
At the further increase of the irradiation dose, we
observe a reduction of µ after a dose of 4·1018 γ-
quantum/cm2 at 78 K (curve 1, Fig. 3), which is condi-
tioned by the scattering by radiation defects.
In addition, it is necessary to note the insignificant
increase of µ with increase in the dose of irradiation at
room temperature (curve 2, Fig. 3) as compared with the
case of a temperature of 78 K (curve 1, Fig. 3). Such a
behavior of µ = ƒ (Ф) is explained by that, at higher
temperature, the radiation-induced defects are ionized
and practically don’t influence the neutralization of
admixture ions, which is manifested, in its turn, in the
relatively small increase µ = ƒ (Ф) in the dose interval
up to 4·1018 γ-quantum/cm2.
Thus, the radiation centers which arise in the
crystal under irradiation both at room and liquid nitrogen
temperatures partially “neutralize” the charge of
admixture ions which are localized at the lattice points.
That is why the charge carrier mobility increase, which
is demonstrated by this work, appears not due to the
increase of the order of crystals under their irradiation,
but due to lowering the effectiveness of the charge
carrier scattering by admixture ions on the partial
“neutralization” of their charge by radiation-induced
defects with the charge of the opposite sign. The
obtained results and their interpretation are in agreement
with the analogous data presented in the works
concerning silicon and germanium single crystals [3, 4].
References
1. E.A. Davis, D.V. Compton, Compensation
dependence of impurity conduction in antimony-
doped germanium // Phys. Rev. A 140, p. 2183-
2194 (1965).
2. C. Yamanouchi, Effects of the magnetic field on
the intermediate impurity conduction in n-Ge // J.
Phys. Soc. Jpn 18, p. 1775-1784 (1963).
3. E.N. Vidalko, G.P. Gaidar, V.A. Girii, The
mobility of current carriers in γ-irradiated Si
crystals // Izv. AN SSSR, Ser. Neorg. Mat. 22,
p. 553-555 (1986) (in Russian).
4. E.N. Vidalko, G.P. Gaidar, V.A. Girii et al.,
Mobility of majority carriers in γ-irradiated
oxygen-containing crystals of n-Si and n-Ge //
Phys. status solidi (a) 97, p. 565–570 (1986).
2 4 6 8 10 12 14
1017
1016
1015
1
2
n, cm-3
103/T, K-1
103
104
105
0 1 2 3 4 5
1
2
Ф⋅10-18 γ-quantum/cm2
sV
cm
⋅
2
,µ
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