Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon diode temperature sensors (DTSs) is proposed. The observed nonmonotonic depe...

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Datum:	2003
Hauptverfasser:	Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Format:	Artikel
Sprache:	English
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Schriftenreihe:	Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:	http://dspace.nbuv.gov.ua/handle/123456789/118002
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors / Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 233-237. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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