Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots
A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOx frag...
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| Datum: | 2003 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118033 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots / V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 299-302. — Бібліогр.: 15 назв. — англ. |