Role of silicon oxide defects in emission process of Si-SiO₂ systems
Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperatur...
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| Datum: | 2003 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118036 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. |