The simple approach to determination of active diffused phosphorus density in silicon
The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature a...
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| Datum: | 2004 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118109 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result. |
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