Local properties of impurity and defects investigated by high pressure spectroscopy
Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Zitieren: | Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. |
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irk-123456789-1181182017-05-29T03:03:21Z Local properties of impurity and defects investigated by high pressure spectroscopy Grinberg, Marek Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³⁺, Pr³⁺, and Cr³⁺ ions in various lattices. 2007 Article Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. 1560-8034 PACS 07.35.+k, 39.30.+w, 71.20.Be, 71.20.Eh http://dspace.nbuv.gov.ua/handle/123456789/118118 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Using the high-pressure spectroscopy, the pressure shifts of the luminescence
related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones,
which interact with the nearest neighbor host ions of dielectrics, are investigated. The
results are obtained for Ti³⁺, Ce³⁺, Pr³⁺, and Cr³⁺ ions in various lattices. |
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Article |
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Grinberg, Marek |
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Grinberg, Marek Local properties of impurity and defects investigated by high pressure spectroscopy Semiconductor Physics Quantum Electronics & Optoelectronics |
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Grinberg, Marek |
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Grinberg, Marek |
| title |
Local properties of impurity and defects investigated by high pressure spectroscopy |
| title_short |
Local properties of impurity and defects investigated by high pressure spectroscopy |
| title_full |
Local properties of impurity and defects investigated by high pressure spectroscopy |
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Local properties of impurity and defects investigated by high pressure spectroscopy |
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Local properties of impurity and defects investigated by high pressure spectroscopy |
| title_sort |
local properties of impurity and defects investigated by high pressure spectroscopy |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2007 |
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http://dspace.nbuv.gov.ua/handle/123456789/118118 |
| citation_txt |
Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT grinbergmarek localpropertiesofimpurityanddefectsinvestigatedbyhighpressurespectroscopy |
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2025-07-08T13:23:45Z |
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2025-07-08T13:23:45Z |
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1837085257084436480 |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007. V. 10, N 3. P. 28-29.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
28
PACS 07.35.+k, 39.30.+w, 71.20.Be, 71.20.Eh
Local properties of impurity and defects investigated
by high pressure spectroscopy
Marek Grinberg
Institute of Experimental Physics, University of Gdańsk
Wita Stwosza 57, 80-952 Gdańsk, Poland
E-mail: fizmgr@univ.gda.pl
Abstract. Using the high-pressure spectroscopy, the pressure shifts of the luminescence
related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones,
which interact with the nearest neighbor host ions of dielectrics, are investigated. The
results are obtained for Ti3+, Ce3+, Pr3+, and Cr3+ ions in various lattices.
Keywords: rare earth ion, transition metal ion, high-pressure spectroscopy.
Manuscript received 07.02.07; accepted for publication 27.09.07; published online 31.10.07.
Spectral properties of the dielectrics doped with
transition elements are determined by the localized states
related to unfilled internal electronic shell 3dn
(1 ≤ n ≤ 10) in the case of transition metal ions and 4fn or
4fn-15d1 (1 ≤ n ≤ 14) in the case of rare earth ions.
Although the 3d and 5d electrons are localized at the
transition ion, they extend enough to interact with the
nearest neighbor host ions. As a result, the energetic
structures of the transition metal and rare earth ion are
different in different hosts. This sensitivity on the host
lattice caused the development in crystal field theory.
We have used the high hydrostatic pressure to change
smoothly the crystal field and, in this manner, to control
all environment-dependent interactions in the system.
For applying pressure, we have used diamond anvil cell
(DAC) that is the most useful equipment for high
pressure optical measurements. Using our system, we
can apply hydrostatic pressure up to 400 kbar. This
paper summarize our results obtained for Ti3+, Ce3+, Pr3+,
and Cr3+ ions in various lattices. The purpose of the
present contribution is to show how high-pressure
spectroscopy can be used to investigate the peculiarities
of host materials.
We have investigated the pressure shift of the
luminescence related to the d-d transitions in the
transition metal ions and d-f transitions in the rare earth
ions. The shifts were related to the pressure dependence
of the cubic crystal field parameter Dq. Since the crystal
field strength is a power function of the central ion –
ligand distance, R, it is possible to relate the effect of
pressure on the energetic structure of the transition ions
to the elastic properties of a host material. One considers
that pressure causes increasing the crystal field with the
rate given by following relation:
03
1
B
K
nDq
dp
dR
R
nDq
dR
dDq
=−= (1)
for transition metal ions and
[ ]
00 3
'
3
'
B
K
E
n
n
En
B
K
nEEn
dp
Ed
cenCRCRcen
+=+=
∆
(2)
for rare earth ions. Here, B0 is bulk modulus of a host
material. The dimensionless coefficient K describes the
way in which the macroscopic effect of pressure
modifies the local environment of the central ion.
K = 1, K < 1, and K > 1 means that the compression
of the ion – ligands system is the same, smaller, and
larger than the compression of the bulk lattice.
Considering the pressure shifts of the characteristic
emission bands of dopands, one can measure the local
compression and the Grüneisen parameter. We have
found that local compressibility of the coordination ion
is about two times smaller than bulk compressibility of
the material. The respective data obtained by us and
taken from the literature are collected in Table.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007. V. 10, N 3. P. 28-29.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
29
The increase of stiffness of the impurity sites has
been attributed to the increase of the energy of localized
3d and 4f electrons caused by pressure-induced
confinement of the system. Using the approximation
where the local ion potential was presented by a
quantum well, one performed model calculations, and an
increase of local stiffness was obtained.
Acknowledgements
The research presented in this paper has been supported
by the Polish State Committee for Scientific Research by
grant No. 2P03 B057 23.
Table. Spectroscopic data and calculated parameters for transition metals and rare earth ions in different materials.
Parameter K is the relative compression of a coordination ion.
Material Edepr,
(cm-1)
Eem
(cm-1)
dEem/dp
(cm-1/kbar)
B0 (kbar) K
YAG:Ce3+
GSAG:Ce3+
YAG:Cr3+
LLGG:Cr3+
Al2O3:Cr3+
Al2O3:Ti3+
YAlO3:Ti3+
LiNbO3:Cr3+
LiTaO3:Cr3+
YAG:Pr3+
27570
27000
27125
19100
17560
17340
15250
11700
13670
12450
16330
10800
11020
–12.5
–11.8
–8.3
–7.5
13
5.40
5.93
19.6
13.5
13.5
–14.1
1870
1916
1330
2420
2420
2004
1058
1057
1870
0.51
0.53
0.59
0.69
0.61
0.68
0.59
1.1
0.57
0.54
0.5
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