Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall coefficient and conductivity measurements. Temperature dependences of the ele...
Gespeichert in:
| Datum: | 2007 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118124 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. |