Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in...

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Bibliographic Details
Date:2007
Main Authors: Moskvin, P.P., Rashkovetsky, L.V., Khodakovsky, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118126
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine