Compensation of hole conductivity in CdTe crystals doped with Cr
We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity le...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118128 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Compensation of hole conductivity in CdTe crystals doped with Cr / E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 77-79. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We present the results of optical and electrophysical investigations of CdTe:Cr
crystals. A model explaining a considerable shift of the fundamental absorbtion edge in
the crystals into the long-wave region is proposed. It is found that the doping of cadmium
telluride crystals with Cr impurity leads to the introduction of deep donors with
Еv + 0.19…0.32 eV |
|---|