Recording of high efficiency diffraction gratings by He-Ne laser
The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching solution was chosen as a registering media. Angular and spectral dependencies...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118141 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Recording of high efficiency diffraction gratings by He-Ne laser / V.I. Min'ko, P.E. Shepeliavyi, V.A. Dan'ko, P.F. Romanenko, O.S. Litvin, I.Z. Indutnyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 88-92. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching solution was chosen as a registering media. Angular and spectral dependencies of grating diffractive efficiency absolute values were measured. A comparison of fabricated gratings characteristics with corresponding parameters of gratings recorded on As₄₀Se₆₀ photoresist was carried out. Numericall simulation of groove profiles inherent to holographic gratings made in various experimental conditions was performed. Shown is that photoresists based on As₄₀S₂₀Se₄₀ are suitable for production of high quality holographic optical elements. |
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