Hydrogen gettering in annealed oxygen-implanted silicon
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118217 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
investigated after annealing of Si:O at temperatures up to 1570 K, including also
processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
accumulated in sub-surface region as well as within implantation-disturbed areas. It has
been found that hydrogen was still present in Si:O,H structures formed by oxygen
implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
well as in SOI structures can be used for recognition of defects. |
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