Hydrogen gettering in annealed oxygen-implanted silicon
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up...
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| Datum: | 2010 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118217 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
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