Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the inten...
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| Datum: | 2010 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118218 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. |