Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions
Studies of polycrystalline TlIn(S₁-xSex)₂ samples under hydrostatic pressure were performed. Determined in this work were pressure coefficients near temperatures of ε(T) anomalies. Based on studying the temperature dependences of dielectric permittivity values for various hydrostatic pressures, (...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Zitieren: | Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions / R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan, V.M. Rubish, O.G. Guranich, A.V. Gomonnai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 35-37. — Бібліогр.: 11 назв. — англ. |
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irk-123456789-1182452017-05-30T03:03:44Z Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions Rosul, R.R. Guranich, P.P. Gomonnai, O.O. Slivka, A.G. Rigan, M.Yu. Rubish, V.M. Guranich, O.G. Gomonnai, A.V. Studies of polycrystalline TlIn(S₁-xSex)₂ samples under hydrostatic pressure were performed. Determined in this work were pressure coefficients near temperatures of ε(T) anomalies. Based on studying the temperature dependences of dielectric permittivity values for various hydrostatic pressures, (р, Т) phase diagram was built. Phase transformations are found in the pressure range of p > 550 MPa. 2012 Article Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions / R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan, V.M. Rubish, O.G. Guranich, A.V. Gomonnai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 35-37. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 62.50.-p, 77.22.-d, 77.80.B http://dspace.nbuv.gov.ua/handle/123456789/118245 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Studies of polycrystalline TlIn(S₁-xSex)₂ samples under hydrostatic pressure
were performed. Determined in this work were pressure coefficients near temperatures of
ε(T) anomalies. Based on studying the temperature dependences of dielectric permittivity
values for various hydrostatic pressures, (р, Т) phase diagram was built. Phase
transformations are found in the pressure range of p > 550 MPa. |
| format |
Article |
| author |
Rosul, R.R. Guranich, P.P. Gomonnai, O.O. Slivka, A.G. Rigan, M.Yu. Rubish, V.M. Guranich, O.G. Gomonnai, A.V. |
| spellingShingle |
Rosul, R.R. Guranich, P.P. Gomonnai, O.O. Slivka, A.G. Rigan, M.Yu. Rubish, V.M. Guranich, O.G. Gomonnai, A.V. Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rosul, R.R. Guranich, P.P. Gomonnai, O.O. Slivka, A.G. Rigan, M.Yu. Rubish, V.M. Guranich, O.G. Gomonnai, A.V. |
| author_sort |
Rosul, R.R. |
| title |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions |
| title_short |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions |
| title_full |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions |
| title_fullStr |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions |
| title_full_unstemmed |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions |
| title_sort |
dielectric properties of tlin(s₁-xsex)₂ polycrystals near phase transitions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118245 |
| citation_txt |
Dielectric properties of TlIn(S₁-xSex)₂ polycrystals near phase transitions / R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan, V.M. Rubish, O.G. Guranich, A.V. Gomonnai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 35-37. — Бібліогр.: 11 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012. V. 15, N 1. P. 35-37.
PACS 62.50.-p, 77.22.-d, 77.80.B-
Dielectric properties of TlIn(S1-xSex)2 polycrystals
near phase transitions
R.R. Rosul1, P.P. Guranich1, O.O. Gomonnai1, A.G. Slivka1, M.Yu. Rigan2, V.M. Rubish2,
O.G. Guranich2, A.V. Gomonnai3
1Uzhhorod National University, Department of Optics, Uzhhorod, Ukraine;
2Uzhhorod Scientific and Technological Centre for Materials of Optical Information Carriers,
Institute for Information Recording, NAS of Ukraine, Uzhhorod, Ukraine;
3Institute of Electron Physics, NAS of Ukraine, Uzhhorod, Ukraine
Abstract. Studies of polycrystalline TlIn(S1-xSex)2 samples under hydrostatic pressure
were performed. Determined in this work were pressure coefficients near temperatures of
ε(T) anomalies. Based on studying the temperature dependences of dielectric permittivity
values for various hydrostatic pressures, (р, Т) phase diagram was built. Phase
transformations are found in the pressure range of p > 550 MPa.
Keywords: polycrystal, hydrostatic pressure, structural transformations.
Manuscript received 15.12.11; revised version received 16.01.12; accepted for
publication 26.01.12; published online 29.02.12.
1. Introduction
A considerable interest to TlInS2-type semiconductor
crystals stems from their physical properties enabling
these materials to be treated as a potential base for
functional elements of electronics, pressure and
temperature gauges, pyroelectric detectors [1]. TlInS2
crystal is a layered ferroelectric semiconductor with a
complex sequence of structural phase transformations
and the presence of an incommensurate phase [2]. A
number of works is devoted to detailed studies of its
dielectric permittivity ε and spontaneous polarization in
a broad temperature interval [3-9]. It was also found that
at substitution of sulphur by selenium in TlIn(S1-xSex)2
the temperature interval of the incommensurate phase is
reduced, and at х = 0.05 a Lifshitz-type polycritical point
is observed in the (x, T) phase diagram [10, 11]. Up to
date, dielectric properties of TlIn(S1-xSex)2 solid
solutions in the vicinity of phase transitions have been
studied quite incompletely. The aim of this work is to
study temperature dependences of the dielectric
permittivity in TlIn(S1-xSex)2 polycrystals (х = 0.01,
0.02, 0.03).
2. Experimental
© 2012, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Polycrystalline TlIn(S1-xSex)2 samples were prepared
from the melt of the stoichiometric mixture of initial
TlInS2 and TlInSe2 components. Dielectric permittivity
measurements were performed in automated mode at the
frequency of 1 MHz using an E7-12 ac bridge with
temperature variation rate within 0.01–0.02 K/s.
Samples of 4×4×2 mm size were used for the
measurements, the contacts of silver paste being applied.
The sample temperature was measured using a copper-
constantan thermocouple. Hydrostatic pressure was
applied using a high-pressure chamber, its value being
controlled within ±1 MPa.
3. Results and discussion
Detailed studies of dielectric permittivity and
spontaneous polarization of TlInS2 layered crystals have
revealed the presence of a number of anomalies at
temperatures Ti = 214 K, Ti2 = 206 K, Tc1 = 202 K,
Tc2 = 198 K, and Tc = 193 K [1, 6-8], the anomalies at
Ti = 214 K and Tc = 193 K corresponding to the
paraelectric-to-incommensurate phase transition and
transition to the ferroelectric phase, respectively. The
mechanism of these transitions was discussed in [1,
5, 7]. The studies of anisotropy of the dielectric
permittivity in TlInS2 single crystals have shown the
anomalies of ε in the vicinity of phase transitions are
observed in all crystallographic directions. The highest
values of the dielectric permittivity ε are observed in the
direction parallel to the crystal layers (ε||), while the
values observed in the perpendicular direction (ε⊥) are
smaller, their ratio ε| | / ε⊥ is close to 10 at Ti = 214 K.
35
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012. V. 15, N 1. P. 35-37.
This anisotropy of ε shows that in polycrystalline TlInS2
one should also expect noticeable values of the dielectric
permittivity, what we actually observed in the
experiment.
Temperature dependences of the real ε′ and
imaginary ε″ parts of the dielectric permittivity at
atmospheric pressure for three compositions of
TlIn(S1-xSex)2 polycrystals are shown in Fig. 1. In these
dependences, an anomaly (maximum) is observed, the
temperature of the ε′ maximum for TlIn(S0.99Se0.01)2 is
Тm = 197 K, and for TlIn(S1-xSex)2 with x =0.02 and
x =0.03, Тm is 193 K and 187 K, respectively. Beside this
anomaly, the samples with the compositions х under
investigation exhibit an additional anomaly (a kink) at a
temperature above that of the maximum (see Fig. 1)
corresponding to the paraelectric-to-incommensurate
phase transition at Ті = 207 K for x =0.01, Ті =203 K for
x = 0.02, and Ті = 197 K for x = 0.03. As shown in the
earlier works [1, 5, 7], in TlInS2 single crystal the
transition to the ferroelectric phase is accompanied by a
sharp decrease in the dielectric permittivity. The
maximal values of the dielectric permittivity are
achieved at the phase transitions at Ti2 = 206 K and
Tc1 = 202 K. For TlIn(S1-xSex)2 polycrystalline samples,
these anomalies converge to a broad maximum at Т = Тm
and cannot be separated. The phase transition to the
polar phase at Т = Тс should correspond to the low-
temperature shoulder in the temperature dependence of
the dielectric permittivity at Т < Тm. For TlIn(S1-xSex)2
crystals these anomalies are observed at the temperatures
Тс = 189 K for x = 0.01, Тс = 183 K for x = 0.02, and
Тс = 178 K for x = 0.03. Hence, in TlIn(S1-xSex)2
polycrystals the sequence of paraelectric-to-
incommensurate-to-ferroelectric transitions corresponds
to a sequence of anomalies of dielectric permittivity at
Ti, Тm, and Tc. It should be noted that due to a certain
smearing of the dielectric permittivity anomalies with
the increase of x, the identification of the anomalies and
determination of their temperatures can be to a certain
extent ambiguous. An effective additional tool that can
be used is the study of external effects, one of which is
hydrostatic pressure.
For polycrystalline TlIn(S0.99Se0.01)2, we carried out
the studies of dielectric permittivity under high
hydrostatic pressure. Temperature dependences of the
dielectric permittivity of TlIn(S0.99Se0.01)2 single crystals
at different hydrostatic pressure values are shown in
Fig. 2. With pressure increase up to 550 MPa, the
dielectric permittivity anomalies linearly shift towards
higher temperatures. This is accompanied by a decrease
in the dielectric permittivity maximum values, an
increase of the Curie-Weiss constant, and an extension
of the temperature interval of the existence of the
incommensurate phase. Due to pressure-induced
extension of the temperature range for the existence of
the incommensurate phase, with the pressure increase up
to 550 MPa the dielectric permittivity anomalies Ti, Тm,
and Tc are revealed more distinctly (see curves 1 to 4 in
Fig. 2).
Fig. 1. Temperature dependence of the real part ε′ of the
dielectric permittivity of TlIn(S1-xSex)2 crystals at the
atmospheric pressure: (a) x = 0.01, (b) x = 0.02, (c) x = 0.03.
The insets show the temperature dependences of ε–1 .
At pressures p > 550 MPa, the ε(T) dependence
undergoes qualitative changes, namely, a sharp decrease
in the maximal values of the dielectric permittivity and
transformation of the anomalies (Fig. 2). This change in
the temperature dependences of dielectric permittivity is
caused by polycritical phenomena typical for TlInS2,
which were studied in [8]. At the pressure р = 650 MPa
for TlIn(S0.99Se0.01)2 polycrystal, the anomalies of
dielectric permittivity are revealed at temperatures Т1 =
218 K, Т2 = 247 K, and Т3 = 289 K. With further
pressure increase, the Т1(p) value decreases, while Т2(p)
and Т3(p) essentially increase.
Based on studying the temperature dependences of
the dielectric permittivity inherent to TlIn(S0.99Se0.01)2
polycrystals at a high hydrostatic pressure, the (р, Т)
phase diagram was built and shown in Fig. 3, and
© 2012, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
36
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012. V. 15, N 1. P. 35-37.
© 2012, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
pressure coefficients for the phase transition temperature
shift were determined with the following values for
TlIn(S0.99Se0.01)2: dTі/dp =55 K/GPa, dTm/dp =
47 K/GPa, dTc/dp = 42 K/GPa, dT1/dp = –39 K/GPa,
dT2/dp = 690 K/GPa, dT3/dp = 938 K/GPa.
4. Conclusions
Studies of the temperature dependence of dielectric
permittivity performed for TlIn(S1-xSex)2 polycrystals
(х = 0.01, 0.02, 0.03) show the presence of anomalies
ascribed to paraelectric-to-incommensurate-to-
ferroelectric phase transitions. Isovalent substitution of S
by Se in these materials reduces the phase transition
temperatures. With the Se content increase up to
х = 0.03, a slight trend to the convergence of the
dielectric permittivity anomalies at Ti and Тm and
divergence of those at Тm and Tc have been observed.
Based on studying the temperature dependences for the
dielectric permittivity of TlIn(S0.99Se0.01)2 crystal at a
high hydrostatic pressure, its (р, Т) phase diagram has
been built.
Fig. 2. Temperature dependence of the real ε′ (a) and
imaginary ε″ (b) parts of the dielectric permittivity of
TlIn(S0.99Se0.01)2 polycrystals at the hydrostatic pressure
values of 0 (1), 190 (2), 350 (3), 550 (4), 580 (5), 610 (6),
680 (7), and 700 MPa (8).
Fig. 3. (p, T) phase diagram for TlIn(S0.99Se0.01)2 polycrystal.
This research was in part supported by STCU
Project No 5208.
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2. Experimental
3. Results and discussion
4. Conclusions
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