A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs

In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall dev...

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Бібліографічні деталі
Дата:2012
Автори: Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118246
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1182462017-05-30T03:04:01Z A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs Sghaier, H. Bouzaiene, L. Sfaxi, L. Maaref, H. In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall device grown on (111) GaAs substrate, with the objective of improving its performances. From self-consistent calculations, we find that the electron concentration ns in the interface region is enhanced. This implies that one can have a wider spacer layer and still have the same ns with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors, where it is desirable to have a low electron concentration and high mobility. 2012 Article A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 53.50.Td, 71.76, 72.80.Ey, 85.30.De, 85.30.Fg http://dspace.nbuv.gov.ua/handle/123456789/118246 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall device grown on (111) GaAs substrate, with the objective of improving its performances. From self-consistent calculations, we find that the electron concentration ns in the interface region is enhanced. This implies that one can have a wider spacer layer and still have the same ns with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors, where it is desirable to have a low electron concentration and high mobility.
format Article
author Sghaier, H.
Bouzaiene, L.
Sfaxi, L.
Maaref, H.
spellingShingle Sghaier, H.
Bouzaiene, L.
Sfaxi, L.
Maaref, H.
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sghaier, H.
Bouzaiene, L.
Sfaxi, L.
Maaref, H.
author_sort Sghaier, H.
title A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
title_short A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
title_full A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
title_fullStr A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
title_full_unstemmed A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
title_sort novel al₀.₃₃ga₀.₆₇as/in₀.₁₅ga₀.₈₅as/gaas quantum well hall device grown on (111) gaas
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118246
citation_txt A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs / H. Sghaier, L. Bouzaiene, L. Sfaxi, H. Maaref // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 72-76. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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