Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions
The moderately damped regime in a Josephson junction (JJ) is quite common in devices characterized by low critical currents and therefore by low Josephson energies. Measurements of switching current distribution (SCD) are a direct way of discriminating the phase dynamics also in the nontrivial cas...
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| Datum: | 2013 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Schriftenreihe: | Физика низких температур |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118248 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions / D. Massarotti, L. Longobardi, L. Galletti, D. Stornaiuolo, G. Rotoli, F. Tafuri // Физика низких температур. — 2013. — Т. 39, № 3. — С. 378–383. — Бібліогр.: 37 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The moderately damped regime in a Josephson junction (JJ) is quite common in devices characterized by low
critical currents and therefore by low Josephson energies. Measurements of switching current distribution (SCD)
are a direct way of discriminating the phase dynamics also in the nontrivial case of moderate damping, which is
going to be more and more common with advances in nanopatterning superconductors and in materials science
finalized to build hybrid systems. We report on measurements of SCDs, both in thermal and quantum regime, on
moderately damped YBaCuO grain boundary biepitaxial JJs. A direct transition from phase diffusion regime to
macroscopic quantum tunnelling occurs at about 130 mK. The crossover to the quantum regime is tuned by the
magnetic field and phase dynamics is described by a fully consistent set of junction parameters derived through
numerical simulations. |
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