Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions

The moderately damped regime in a Josephson junction (JJ) is quite common in devices characterized by low critical currents and therefore by low Josephson energies. Measurements of switching current distribution (SCD) are a direct way of discriminating the phase dynamics also in the nontrivial cas...

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Bibliographic Details
Date:2013
Main Authors: Massarotti, D., Longobardi, L., Galletti, L., Stornaiuolo, D., Rotoli, G., Tafuri, F.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118248
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions / D. Massarotti, L. Longobardi, L. Galletti, D. Stornaiuolo, G. Rotoli, F. Tafuri // Физика низких температур. — 2013. — Т. 39, № 3. — С. 378–383. — Бібліогр.: 37 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The moderately damped regime in a Josephson junction (JJ) is quite common in devices characterized by low critical currents and therefore by low Josephson energies. Measurements of switching current distribution (SCD) are a direct way of discriminating the phase dynamics also in the nontrivial case of moderate damping, which is going to be more and more common with advances in nanopatterning superconductors and in materials science finalized to build hybrid systems. We report on measurements of SCDs, both in thermal and quantum regime, on moderately damped YBaCuO grain boundary biepitaxial JJs. A direct transition from phase diffusion regime to macroscopic quantum tunnelling occurs at about 130 mK. The crossover to the quantum regime is tuned by the magnetic field and phase dynamics is described by a fully consistent set of junction parameters derived through numerical simulations.