Phase diagrams of Si₁-xGex solid solution: a theoretical approach
In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting elemen...
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| Datum: | 2012 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118268 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this work, we have used the pseudo-alloy atom model and higher-order
perturbation theory based on pseudopotential approach to investigate phase diagram at
different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic)
concentration of the second constituting element. We have also investigated the phase
diagram near the melting temperature as well as at low temperatures and compared with
the available experimental results. Our calculated phase diagram near the melting point
agrees well with the experimental data. |
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