Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures
We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the gen...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118305 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. |
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