Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures
Electrophysical properties of large-size detector heterostructures based on a αSi-Si(Li) have been investigated in this paper. The results prove that these detector heterostructures are more effective as compared to the structures obtained using the conventional diffusion technique. One can certa...
Gespeichert in:
Datum: | 2012 |
---|---|
Hauptverfasser: | Muminov, R.A., Saymbetov, A.K., Toshmurodov, Yo.K. |
Format: | Artikel |
Sprache: | English |
Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118318 |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures / R.A. Muminov, A.K. Saymbetov, Yo.K. Toshmurodov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 285-287. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineÄhnliche Einträge
-
Electrophysical characteristics of large-size aSi-Si(Li) detector heterostructures
von: R. A. Muminov, et al.
Veröffentlicht: (2012) -
The effect of size of the SiC inclusions in the AlN–SiC composite structure on its electrophysical properties
von: T. B. Serbeniuk, et al.
Veröffentlicht: (2016) -
Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures
von: Dugaev, V.K., et al.
Veröffentlicht: (2000) -
Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure
von: V. A. Vinichenko, et al.
Veröffentlicht: (2016) -
Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure
von: V. A. Vynychenko, et al.
Veröffentlicht: (2016)