Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n⁺ -p diodes which manifests hysteresis loops related with low-temperature impurity breakdown has been studied. With growth of magnetic field, the hysteresis loops are narrowed and decreased in amplitude and then...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118325 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ. |