Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystal...

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Datum:2012
Hauptverfasser: Rubish, V.M., Kozusenok, O.V., Shtets, P.P., Marjan, V.M., Gera, E.V., Tarnaj, A.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118326
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Zitieren:Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ.

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spelling irk-123456789-1183262017-05-30T03:06:04Z Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method Rubish, V.M. Kozusenok, O.V. Shtets, P.P. Marjan, V.M. Gera, E.V. Tarnaj, A.A. The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed. 2012 Article Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 78.20.-e http://dspace.nbuv.gov.ua/handle/123456789/118326 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed.
format Article
author Rubish, V.M.
Kozusenok, O.V.
Shtets, P.P.
Marjan, V.M.
Gera, E.V.
Tarnaj, A.A.
spellingShingle Rubish, V.M.
Kozusenok, O.V.
Shtets, P.P.
Marjan, V.M.
Gera, E.V.
Tarnaj, A.A.
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rubish, V.M.
Kozusenok, O.V.
Shtets, P.P.
Marjan, V.M.
Gera, E.V.
Tarnaj, A.A.
author_sort Rubish, V.M.
title Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
title_short Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
title_full Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
title_fullStr Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
title_full_unstemmed Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
title_sort crystallization study of (as₂s₃)₁₀₀-x(sbsi)x amorphous films by the optical method
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118326
citation_txt Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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