Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure

A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface...

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Datum:2007
Hauptverfasser: Grushko, E.V., Maslyanchuk, O.L., Mathew, X., Motushchuk, V.V., Kosyachenko, L.A., Streltsov, E.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118343
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ.

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spelling irk-123456789-1183432017-05-30T03:04:16Z Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the abovementioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra. 2007 Article Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/118343 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the abovementioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra.
format Article
author Grushko, E.V.
Maslyanchuk, O.L.
Mathew, X.
Motushchuk, V.V.
Kosyachenko, L.A.
Streltsov, E.A.
spellingShingle Grushko, E.V.
Maslyanchuk, O.L.
Mathew, X.
Motushchuk, V.V.
Kosyachenko, L.A.
Streltsov, E.A.
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Grushko, E.V.
Maslyanchuk, O.L.
Mathew, X.
Motushchuk, V.V.
Kosyachenko, L.A.
Streltsov, E.A.
author_sort Grushko, E.V.
title Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
title_short Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
title_full Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
title_fullStr Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
title_full_unstemmed Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
title_sort spectral distribution of photoelectric quantum yield of thin-film au-cdte diode structure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/118343
citation_txt Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-07-08T13:45:02Z
last_indexed 2025-07-08T13:45:02Z
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