Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and disloca...
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| Date: | 2007 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118345 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The time dependences of changes of the electrophysical, mechanical, and light
emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
revealed. |
|---|