Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing

The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and disloca...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Shutov, S.V., Shtan’ko, A.D., Kurak, V.V., Litvinova, M.B.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118345
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118345
record_format dspace
fulltext
spelling irk-123456789-1183452017-05-30T03:03:58Z Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed. 2007 Article Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.72.Cc, 61.71.Ji, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118345 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed.
format Article
author Shutov, S.V.
Shtan’ko, A.D.
Kurak, V.V.
Litvinova, M.B.
spellingShingle Shutov, S.V.
Shtan’ko, A.D.
Kurak, V.V.
Litvinova, M.B.
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Shutov, S.V.
Shtan’ko, A.D.
Kurak, V.V.
Litvinova, M.B.
author_sort Shutov, S.V.
title Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
title_short Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
title_full Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
title_fullStr Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
title_full_unstemmed Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
title_sort change of parameters of semiinsulated undoped gaas nonstoichiometric crystals under annealing
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/118345
citation_txt Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT shutovsv changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing
AT shtankoad changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing
AT kurakvv changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing
AT litvinovamb changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing
first_indexed 2025-07-08T13:45:14Z
last_indexed 2025-07-08T13:45:14Z
_version_ 1837086607940780032