Analysis of features of recombination mechanisms in silicon solar cells
Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of solar cells. The first construction is a solar cell with contacts on the fron...
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| Дата: | 2014 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118353 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Analysis of features of recombination mechanisms in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1183532017-05-31T03:03:32Z Analysis of features of recombination mechanisms in silicon solar cells Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of solar cells. The first construction is a solar cell with contacts on the front and back surfaces, and the second – solar cells with back barriers and contact metallization. Analyzed in the work are spectral dependences of the internal quantum efficiency for the short-circuit current and smallsignal photo-e.m.f. It has been shown that the short-wave drop of the short-circuit current is related with recombination on deep centers at the front surface as well as inter-band Auger recombination in the heavily doped emitter. At the same time, availability of the shortwave drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate of surface recombination Seff(l) due to diffusion inflow. The latter takes place when a layer with the thickness dp and increased recombination is available near illuminated surface. In this case, the mechanism providing decrease in the small-signal photo-e.m.f. in the area of strong light absorption is related with increasing the efficient rate of surface recombination near the front surface, when the dominant amount of electro-hole pairs is generated in the layer with the increased recombination rate. The same mechanism is responsible for the short-circuit current drop in solar cells with back barriers and contact metallization. Juxtaposition of theoretical and experimental results enabled to determine parameters that characterize sub-surface properties of solar cells, namely: the thickness of the surface layer with increased recombination, lifetime of carriers in it, and dependences Seff(l). 2014 Article Analysis of features of recombination mechanisms in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 88.40.Jj http://dspace.nbuv.gov.ua/handle/123456789/118353 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Investigated in this paper are theoretical and experimental spectral
dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon
solar cells. The authors have considered two constructions of solar cells. The first
construction is a solar cell with contacts on the front and back surfaces, and the second –
solar cells with back barriers and contact metallization. Analyzed in the work are spectral
dependences of the internal quantum efficiency for the short-circuit current and smallsignal
photo-e.m.f.
It has been shown that the short-wave drop of the short-circuit current is related with
recombination on deep centers at the front surface as well as inter-band Auger
recombination in the heavily doped emitter. At the same time, availability of the shortwave
drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate
of surface recombination Seff(l) due to diffusion inflow.
The latter takes place when a layer with the thickness dp and increased recombination is
available near illuminated surface. In this case, the mechanism providing decrease in the
small-signal photo-e.m.f. in the area of strong light absorption is related with increasing
the efficient rate of surface recombination near the front surface, when the dominant
amount of electro-hole pairs is generated in the layer with the increased recombination
rate. The same mechanism is responsible for the short-circuit current drop in solar cells
with back barriers and contact metallization.
Juxtaposition of theoretical and experimental results enabled to determine parameters
that characterize sub-surface properties of solar cells, namely: the thickness of the
surface layer with increased recombination, lifetime of carriers in it, and dependences
Seff(l). |
| format |
Article |
| author |
Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| spellingShingle |
Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. Analysis of features of recombination mechanisms in silicon solar cells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| author_sort |
Korkishko, R.M. |
| title |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_short |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_full |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_fullStr |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_full_unstemmed |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_sort |
analysis of features of recombination mechanisms in silicon solar cells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118353 |
| citation_txt |
Analysis of features of recombination mechanisms
in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T13:46:05Z |
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