Dislocation emission caused by different types of nanoscale deformation defects in CdTe
Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regi...
Gespeichert in:
| Datum: | 2014 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118357 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Dislocation-related defects induced by dislocation motion in p-CdTe were
studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
(110), and (111) surfaces at room temperatures was visualized by chemical etching and
low temperature photoluminescence in a mapping regime. The crystallographic
orientation of the dislocation rosettes of macroscopic plastic deformation lines was
analyzed on the (100), (110), and (111) surfaces. |
|---|