Influence of complex defects on electrophysical properties of GaP light emitting diodes
In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated that nonradiative levels of radiation defects affect electroluminescence que...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118369 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of complex defects on electrophysical properties of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |