Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers’ thickness and compositio...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118414 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ. |