Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications

Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as promising candidates for preparation of sensing elements for metal oxide semiconductor gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are investigated. The influence of deposition temperatu...

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Datum:2014
Hauptverfasser: Klochko, N.P., Klepikova, K.S., Khrypunov, G.S., Pirohov, O.V., Novikov, V.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118415
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ.

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