Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the s...
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Date: | 2014 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118424 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. |