Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-...
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| Datum: | 2014 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118429 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ. |
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