Radiation-induced optical darkening and oxidation effects in As₂S₃ glass
The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average energy E = 1.25 MeV and accumulated dose Ф = 2.41 MGy is reported. The red s...
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118483 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 308-312. — Бібліогр.: 26 назв. — англ. |
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