Heterostructure ohmic contacts to p-CdTe polycrystalline films
Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That allows one to create ohmic heterocontacts...
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118495 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Heterostructure contacts p⁺
-PbTe/p-CdTe were prepared using the hot-wall
technique on glassceramic substrates. It has been shown that the potential barrier at the
p⁺
-PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
allows one to create ohmic heterocontacts of metal-p⁺
-PbTe/p-CdTe type. The transverse
and in-plane transport of carriers has been investigated as a function of bias voltage and
temperature. The current-voltage characteristics measured for the transverse arrangement
of contacts exhibited ohmic behavior. The current-voltage characteristics of these
contacts are determined by unipolar injection of holes from p⁺
-PbTe into p-CdTe. The inplane
transport has been explained by presence of potential barriers at the grain
boundaries. The potential barrier height has been estimated to be ~0.1 eV at room
temperature. The mechanism of carrier transport is thermionic emission. |
|---|