Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 t...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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| Zitieren: | Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. |
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irk-123456789-1185552017-05-31T03:06:15Z Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals Milenin, V.V. Red’ko, R.A. We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was obtained that a short-term influence of field initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. General regularities in behavior of the luminescence intensity have been found. This intensity changes with the concentration of recombination centers. A possible mechanism of observed transformations has been discussed. 2010 Article Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 68.55.-a, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118555 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
| description |
We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed. |
| format |
Article |
| author |
Milenin, V.V. Red’ko, R.A. |
| spellingShingle |
Milenin, V.V. Red’ko, R.A. Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Milenin, V.V. Red’ko, R.A. |
| author_sort |
Milenin, V.V. |
| title |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_short |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_full |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_fullStr |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_full_unstemmed |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_sort |
effect of pulsing magnetic field on radiative recombination spectra of gap and inp single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118555 |
| citation_txt |
Effect of pulsing magnetic field on radiative recombination spectra
of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT mileninvv effectofpulsingmagneticfieldonradiativerecombinationspectraofgapandinpsinglecrystals AT redkora effectofpulsingmagneticfieldonradiativerecombinationspectraofgapandinpsinglecrystals |
| first_indexed |
2025-07-08T14:14:03Z |
| last_indexed |
2025-07-08T14:14:03Z |
| _version_ |
1837088426932830208 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 4. P. 379-383.
PACS 68.55.-a, 71.55.Eq
Effect of pulsing magnetic field on radiative recombination spectra
of GaP and InP single crystals
V.V. Milenin, R.A. Red’ko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-94-64, 525-61-82; e-mail: re_rom@ukr.net
Abstract. We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed.
Keywords: photoluminescence, weak magnetic field, impurity-defect composition.
Manuscript received 16.04.10; accepted for publication 02.12.10; published online 30.12.10.
1. Introduction
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
317 cm −
Up to date, it is established that weak magnetic fields
(MF) with the induction B ≤ 1 T can essentially
influence on the real structure and properties of various
non-magnetic materials at room temperatures [1, 2]. The
investigations carried out with alkali-halide crystals
attribute the structural changes appearing due to
magnetic treatments to the destruction of defect
complexes inherent to these materials. Such destruction
leads to formation of non-equilibrium natural and
impurity defects that participate in quasi-chemical
reactions of formation of new electrically active centers.
An interesting feature is that the observed changes in the
defect subsystem take place at the energy values that are
some orders of magnitude lower than the activation
energy for reorganization of structural defects.
There are numerous theoretical and experimental
investigations of the changes of the state of defects
caused by exposure in MF. Many of these investigations
deal with ionic crystals. The amount of publications
devoted to the study of MF induced effects in silicon and
Si-SiO2 structures is small [3-6]. And the question about
the effect of perspective weak pulsing MFs [7-9] on the
modification of physical properties of practically
important III-V semiconductors still remains open.
For finding-out the nature of observable effects in
these materials, using the spectral techniques, in
particular the luminescent ones [10], for objects, which
defect nature was reliably ascertained at the microscopic
level, seems reasonable. In this work, the luminescent
properties of indium and gallium phosphides were
studied as a result of influence of pulsing MFs.
2. Experimental
Single crystals of GaP doped with Te (carrier
concentration up to 10 ), and CZ-grown n-type
InP crystals without intentional doping were used in our
investigations. Stationary photoluminescence (PL)
spectra were measured at 77 K within the spectral range
0.5 to 2.4 eV. Magnetic-field treatments were carried out
using MF single pulses (pulse duration ~30 ms, the
induction 15 and 60 mT) and 60 s pulse series (with
B ~ 60 mT, f = 10 Hz, and duration of pulse 2 ms). The
samples were treated at room temperature in ambient
atmosphere.
3. Results and discussion
Stationary PL spectra of GaP crystals measured before
and after MF treatment at 15 and 60 mT are shown in
Figs 1 and 2, respectively. The shape of the spectra of
initial samples in the region of impurity-related emission
testifies the imperfect crystalline structure of samples
and high concentration of uncontrollable impurities. The
379
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 4. P. 379-383.
bands with and
dominate in the initial samples.
eV72.1GaP
max1
=νh eV28.1GaP
max2
=νh
Despite numerous investigations of optical
properties of both GaP itself and impurities in it,
identification of bands in radiation recombination
spectra is a complicated problem, which is caused by
many factors. They are: presence of various impurities,
including uncontrollable (in the ground state and in
excited states), various inter-impurity transitions in
donor-acceptor (DA) pairs and phonon repetitions,
various distances between impurities in lattice, etc.
According to [11-13], we attribute the band at
1.72 eV to the inter-impurity recombination, namely:
donor (Te)/hole trap formed by the VGa-3DP complex.
Here, D = S, Se, or Te. These complexes should be
electrically neutral (isoelectronic), because three donor
atoms substituting P supply three electron deficiencies to
near-neighbor Ga vacancy. In the heavily Te-doped GaP
crystals, the nature of isoelectronic centers is related to
the VGa-3TeP complex, as shown in [12], contrary to the
existing statement that the band at 1.7 eV appears due to
the microcrystalline inclusions of phosphorus. In view of
[14], we believe that the band with is
related to the inter-impurity recombination in the long-
range DA pairs with participation of oxygen, which is
responsible for the emission in the narrow infrared
region (1.25 to 1.50 eV).
eV28.1GaP
max2
=νh
Magnetic-field treatment at the induction close to
15 mT does not result in essential changes of the
emission spectra (a small decrease in the PL intensity is
observed). The intensities of PL peaks after short-term
treatments increased and exceeded the initial ones.
Long-term changes in the PL spectra after switching the
field off had a non-monotonic character and were
different for bands of various origin. Actually,
synchronous changes in the intensity of PL bands were
observed only at the initial stage after MF treatment.
Then the time dependence showed the following
features. The growth of 1.72 eV peak intensity with
increasing the time period after treatment was
accompanied by lowering the intensity of the peak at
and vice versa. eV28.1GaP
max2
=νh
Long-term changes in the intensity for certain time
intervals are accompanied by shifts in the frequency
positions of band peaks, namely, a blueshift of the band
at and redshift of the band at
.
eV28.1GaP
max2
=νh
eV72.1GaP
max1
=νh
The above described results as well as the change
in the half-widths of bands allow us to conclude that MF
treatment influences not only on the concentration of
dominating centers that form the PL spectra but also
promotes the appearance of new emission bands that
overlap with the observed ones.
The increase of the magnetic field induction up to
60 mT results in qualitatively similar changes in long-
term non-monotonic dependences of the band intensity.
Differences are observed only at the initial stage of long-
term relaxation: the intensity of the PL peak at
is not practically changed, while the
PL peak at is quenched.
eV72.1GaP
max1
=νh
eV28.1GaP
max2
=νh
At the same time, absolute changes of intensity
values that occur after treatments are similar. It allows us
to conclude that the effects of long-term relaxation do
not depend on the value of MF and are a consequence of
a general mechanism that influences on structural states
of defects. Activation of this mechanism is caused by
pulsing magnetic field.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
It should be noted that residual changes in the
luminescence spectra are observed for a long time after
MF exposure (up to several days), which distinguishes
the observed phenomena from those observed only in the
cause of MF action. These are, for example, changes of
photocurrent [14]. Besides, experiments on PL from GaP
crystals were carried out under conditions when the
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
20
40
60
80
100
120
140
160
180
200
220
240
260
5
4
3
2
P
L
In
te
ns
ity
, a
rb
.u
ni
ts
Photon energy, eV
1
Fig. 2. PL spectra of the GaP samples before (1), after magnetic-
field treatment B = 60 mT (2), and kept for 3 (3), 7 (4), and
17 (5) days after treatment.
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
5
4
3
2
P
L
In
te
ns
ity
, a
rb
.u
ni
ts
Photon energy, eV
1
Fig. 1. PL spectra of the GaP samples before (1), after magnetic-
field treatment B = 15 mT (2), and kept for 3 (3), 7 (4), and
17 (5) days after treatment.
380
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 4. P. 379-383.
energy “transmitted” to structural defects in magnetic
field with the induction B satisfied the requirement
, with being the Bohr magneton,
T = 290 K the MF treatment temperature, and the
activation energy of the reorganization of defect
complexes. In view of these factors, it is natural to
attribute the observed changes in PL spectra to the spin-
dependent conversion of structural complexes, into
which composition paramagnetic defects enter [1, 2].
MF influence on PL under condition of
aQkTB <<<<μB Bμ
aQ
kTB <<μB
results in changes of the multiplicity of defect complexes
and thermally induced break of weak bonds between
defects, removes spin forbidding for reactions between
defects in GaP. These transformations occur with defects
of both radiative and non-radiative recombination, which
are most probably in metastable state.
To reveal how the weak MF influences on the
reorganization of defects in InP crystals, we consider the
changes in the parameters of PL bands in details. It is
natural that the microstructure of centers of radiative
recombination differs from that in GaP.
Stationary PL spectra of Cz-InP crystals measured
before and after the treatment by a single pulse of MF
with B = 60 mT, τ = 30 ms are shown in Fig. 3.
PL spectra of initial InP consist of only two bands
with the peaks at and
. We believe in view of data of PL
researches of undoped crystals InP n-type [11-15] and
experimental values of peaks position for radiation
recombination, it is possible to assume that the passes
through shallow donor and partially band to band
transitions of free electrons and holes participate in
forming of the peak near 1.41 eV.
eV41.1InP
max1
=νh
eV14.1InP
max2
=νh
The calculated ionization energy, drawing on a
position of a spectral band maximum, makes ~7 meV,
which is in a good agreement with the energy position of
Si donor level in InP [15], atoms of which together with
Fe atoms are spread non-controlled impurities in the
above semiconductor.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
50
100
150
200
250
300
6
3
7
5
4
2
P
L
in
te
ns
ity
, a
rb
. u
ni
ts
Photon energy, eV
1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.0
0.5
1.0
1.5
3
4
2PL
In
te
ns
ity
, a
rb
.u
ni
ts
Photon energy, eV
1
Fig. 4. PL spectra of the InP samples before (1), after magnetic-
field treatment (B = 60 mT, f = 10 Hz, t = 60 s) (2), and kept for
1 (3) and 11 (4) days after treatment.
Fig. 3. PL spectra of the InP samples before (1), after
magnetic-field treatment (B = 60 mT, τ = 30 μs) (2), and kept
for 1 (3), 7 (4), 9 (5), 14 (6), and 15 (7) days after treatment.
According to that stated above, the band at
probably originates from the
[Fe
eV14.1InP
max2
=νh
In+VP] complexes [16]. It should be noticed that in
[17] a more grounded model of the center responsible
for the band close to 1.14 eV is presented. According to
this model, this center is formed by Fe atoms in the
positions of In atoms and P vacancies, FeInVP.
As a result of MF treatment of indium phosphide,
like to the earlier experiments with GaP, long-term and
oscillatory changes in the intensity and half-width of PL
bands are observed. Values of the intensity after MF
exposure can be both higher and lower than the initial
ones. The biggest changes in the intensity are observed
in some time interval after MF exposure. The changes of
the radiative recombination spectra of InP and GaP
crystals are qualitatively similar. This supports the
common mechanism of defect structure reorganization
as a result of MF treatment. From this statement, one can
expediently compare the effects of the single pulses of
MF with series of symmetric pulses with definite
duration.
PL spectra of InP samples before and after pulsing
MF treatment (B = 60 mT, f = 10 GHz, t = 60 s) are
shown in Fig. 4. The intensity of PL bands immediately
after this treatment was not practically changed like to
that observed for single-pulse MF treatment. For some
time period after MF exposure, non-monotonic changes
in the intensity of both impurity and near-edge bands
were observed. Small displacements of the positions of
band maxima were observed, too. Reproducibility of
these shifts however, was not established accurately.
Absence of synchronous changes in intensities of the
observed bands specifies that their behaviour cannot be
explained as the change of the channel for non-radiative
recombination only. Most probably, like to the case of
single pulses, the reorganization of centers responsible
for radiative recombination takes place, too. The shifts
of maxima and change in the half-width of impurity
band as well as observed in some samples bands at
and , which nature eV05.1InP
max3
=νh eV21.1InP
max4
=νh
381
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 4. P. 379-383.
are related to the donor-acceptor pairs VP-impurity and
Pi-impurity, respectively [18], confirm it.
Although some differences in changes of PL
spectra are observed (which can be caused by
differences of the structural state of initial InP samples),
general regularities can be summarized as follows:
i) MF treatment results in essential changes of
radiation recombination spectra;
ii) changes in the intensities of impurity bands are
feebly pronounced immediately after MF treatment,
but for amplification of these changes, which are
grounded on a structural changes in lattice of
semiconductors, the time interval after switching
the MF off is necessary;
iii) the changes in PL bands intensities are long-term
and oscillatory;
iv) the effect of magnetic field is the change of both
radiative and non-radiative channels of
recombination.
Despite many reports on the influence of MF
treatment on properties of semiconductors [1-9], it was
not possible up to now to offer a comprehensive well-
grounded model of the observed phenomena. The main
obstacle is the lack of convincing data about the type of
atoms and the defects that form complexes sensitive to
MF. The analysis of the nature of PL centers done in this
paper confirms convincingly what was noted above. But
it should be noted that magnetic-sensitive centers consist
of paramagnetic defects and impurity atoms with non-
zero nuclear spin in all the cases. According to [4],
destruction of impurity-defect complexes occurs as
caused by the increase of filling the excited triplet states
of defects during relaxation of electron-nuclear spin
system polarization after exposure to MF. As a result,
non-equilibrium native point and impurity defects appear
that induce local quasi-chemical reactions. However, it
is impossible to definitely establish the nature and
concentrations of structural defects that arise from
mentioned destructions. It is possible to ascertain only
that these defects can form the radiative and non-
radiative recombination centers, which result in the
changes of intensities in the observed luminescence
bands. Their long-term changes are determined by
diffusion rates of the components of impurity-defect
complexes that are destructed as a result of pulsing MF
treatments.
The last but not least, structural reorganizations
induced by MF will occur most efficiently in a near-
surface area of semiconductor. This is characterized by
the increased concentration of initial structural
disturbances. This area was studied in the present paper.
4. Conclusions
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
For the first time, the effect of weak (60 and 15 mT)
pulse magnetic field on the spectra of defect states in
GaP and InP was observed experimentally. It was
defined that the short-term influence of MF initiates
long-term changes in the photoluminescence intensity of
centers of different nature. The observable changes in
these PL spectra are probably caused by the influence of
MF on a spin-dependent quasi-chemical destruction
reactions and subsequent association of point defects and
impurities.
This research was supported by the Grant ДЗ/478-
2009 from the Ministry of Education and Science of
Ukraine.
Acknowledgements
Authors are grateful to Dr. R.V. Konakova for her
permanent interest to the work and fruitful discussions.
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