Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.
Gespeichert in:
| Datum: | 2010 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118563 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We studied the effect of uniform compression on characteristics of Au–n-Si
Schottky barrier diodes made of overcompensated semiconductor. It is shown that
overcompensation is caused by formation of structural defects owing to thermal
treatment of the initial silicon wafers. |
|---|