Properties of junction diodes under conditions of bisotropic strains
In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as lon...
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| Datum: | 2009 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118608 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |