Self-purification effect in CdTe:Gd crystals
The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concent...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118666 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The temperature dependences (T = 80 – 420 K) of the concentration of charge
carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by
the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd
crystals changes with increase in the impurity concentration in the melt: n-conductivity at
5.10¹⁷ – 3.10¹⁸ cm⁻³ and p-conductivity at 3.10¹⁸ – 10¹⁹ cm⁻³. The concentrations and
ionization energies of A₁ (EA₁ = 0.05 eV) and A₂ (EA₂ = 0.12-0.15 eV) acceptors are
determined from the temperature dependences of the Hall coefficient and the mobility of
carriers. A long-term thermal treatment of gadolinium-doped p-CdTe crystals in the
range 663 – 713 K is accompanied by the “self-purification” of the material from A₂-
acceptors and compensating donors. The Gd impurity at C₀ > 3.10¹⁸ cm⁻³ is shown to
bring no new electrical active centers into the CdTe lattice, by reducing, at the same time,
the background of residual impurities. It is suggested that Te precipitates and Te inclusions
serve as sinks for the above defects. |
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