Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model

In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large...

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Datum:2013
1. Verfasser: Alisultanov, Z.Z.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
Schriftenreihe:Физика низких температур
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118667
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap.