Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large...
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Datum: | 2013 |
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Format: | Artikel |
Sprache: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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Schriftenreihe: | Физика низких температур |
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Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118667 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of UkraineZusammenfassung: | In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
using a simple model. We have obtained the expressions for static conductance and thermopower of the
epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the
semiconductor band gap. |
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