High-frequency properties of systems with drifting electrons and polar optical phonons
An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantu...
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| Datum: | 2008 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. |