Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relati...
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| Дата: | 2009 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118683 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1186832017-05-31T03:10:10Z Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations Morozovska, A.N. Svechnikov, G.S. Shishkin, E.I. Shur, V.Y. In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relation between piezoelectric tensor components and the spontaneous polarization vector. The depth profile of the polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire equation. We demonstrate that depending on the material parameters such as the intrinsic domain wall width and probe apex geometry, the shape of the nucleating nanodomains induced by the probe can be either oblate or prolate. The derived analytical expressions for the polarization redistribution caused by the biased probe are valid for both first and second order ferroelectrics. 2009 Article Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 77.80.Fm, 77.22.Ej http://dspace.nbuv.gov.ua/handle/123456789/118683 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to
describe the ferroelectric domain structure formation using Scanning Probe Microscopy.
We calculate the effective local piezoresponse of the domain structure within the
decoupling approximation using the conventional relation between piezoelectric tensor
components and the spontaneous polarization vector. The depth profile of the
polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire
equation. We demonstrate that depending on the material parameters such as the intrinsic
domain wall width and probe apex geometry, the shape of the nucleating nanodomains
induced by the probe can be either oblate or prolate. The derived analytical expressions
for the polarization redistribution caused by the biased probe are valid for both first and
second order ferroelectrics. |
| format |
Article |
| author |
Morozovska, A.N. Svechnikov, G.S. Shishkin, E.I. Shur, V.Y. |
| spellingShingle |
Morozovska, A.N. Svechnikov, G.S. Shishkin, E.I. Shur, V.Y. Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Morozovska, A.N. Svechnikov, G.S. Shishkin, E.I. Shur, V.Y. |
| author_sort |
Morozovska, A.N. |
| title |
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| title_short |
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| title_full |
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| title_fullStr |
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| title_full_unstemmed |
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| title_sort |
domain structure formation by using scanning probe microscopy: equilibrium polarization distribution and effective piezoelectric response calculations |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118683 |
| citation_txt |
Domain structure formation by using Scanning Probe Microscopy:
equilibrium polarization distribution and effective piezoelectric
response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T14:27:30Z |
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