Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameter...
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| Datum: | 2009 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118694 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A data acquisition, parameter extraction and characterization system for
electronic active components is presented in this paper. High sensitivity measuring
equipments were used for data acquisition and effective extraction models based on
optimization techniques developed to obtain the parameters of p-n junction diodes,
Schottky diodes, field effect transistors and bipolar junction transistors. The performance
of the developed extraction techniques are apparent via comparing experimental data
with Spice simulated data using the model parameter that is graphically extracted and
also those extracted using optimization techniques. The performance of the developed
extraction techniques has been demonstrated by comparing the experimental
characteristics with Spice simulated curves using default parameters and model
parameters extracted using graphical and optimization techniques. The relative
excursions of the simulated I-V characteristics of most investigated devices were less
than 2.5 % with respect to the experimental curves, which shows the accuracy and
effectiveness of the developed system. A number of software routines have also been
implemented under Matlab environment to extract the Spice model parameters for
different electronic devices. |
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