Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
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Date: | 2012 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118719 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |