On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for s...
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| Date: | 2009 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118830 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |