Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo method that assumes a lowdensity electron gas and does not take into account el...

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Datum:2009
Hauptverfasser: Korotyeyev, V.V., Syngayivska, G.I., Kochelap, V.A., Klimov, A.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118831
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN / V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 328-338. — Бібліогр.: 21 назв. — англ.

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