Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature rang...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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| Cite this: | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
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irk-123456789-1188402017-06-01T03:06:25Z Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Babych, V.М. Olikh, Ja.М. Tymochko, M.D. Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall effect method within the temperature range 100–300 K. Peculiarities of US action in the treatment and loading modes on the temperature hysteresis of electrophysical characteristics in investigated material (extension and narrowing) were analyzed. Diffusion and deformation mechanisms responsible for US modification of defect complexes have been suggested. 2009 Article Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 43.35.-c,+d, 61.72.Cc, 61.80.-x, 72.20.My, 81.40.Wx http://dspace.nbuv.gov.ua/handle/123456789/118840 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested. |
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Article |
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Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
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Babych, V.М. Olikh, Ja.М. Tymochko, M.D. Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| author_sort |
Babych, V.М. |
| title |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_short |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_fullStr |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full_unstemmed |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_sort |
influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-si–fz |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2009 |
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http://dspace.nbuv.gov.ua/handle/123456789/118840 |
| citation_txt |
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 375-378.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
375
PACS 43.35.-c,+d, 61.72.Cc, 61.80.-x, 72.20.My, 81.40.Wx
Influence of ultrasound treatment and dynamic (in-situ) ultrasound
loading on the temperature hysteresis of electrophysical
characteristics in irradiated n-Si–Fz
V.М. Babych, Ja.М. Olikh, M.D. Tymochko*
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
*Corresponding author phone: 38 (044) 525-62-56, е-mail: tymochko@ukr.net
Abstract. Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after -irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested.
Keywords: ultrasound treatment, ultrasound (in-situ) loading, irradiation defects, electric
activity, silicon, Hall effect.
Manuscript received 15.08.09; accepted for publication 10.09.09; published online 30.10.09.
1. Introduction
Nowadays, radiation defects (RD) in silicon crystals
induced by various kinds of irradiation are well known,
but physics of ultrasound (US) interactions with these
defects, their sensitivity to acoustic vibrations are not
sufficiently investigated. In previous papers, the
influence of ultrasonic treatment on the diffusion length
of minority charge carriers in p-type silicon crystals [1],
on the lifetime of non-equilibrium charge carriers [2] and
on the intrinsic friction [3] in γ-irradiated silicon samples
was studied.
In the course of investigations of the US influence
on the electro-physical (EPh) characteristics of γ-
irradiated silicon samples, it has been found that separate
RD – А-centres (Ес–0.20) eV and divacancies (Ес–
0.26) eV in the melted samples n-Sі–Сz; divacancies
and/or Ps-Ci complexes (Ес–0.23) eV in the floating zone
samples n-Sі–FZ - are acoustoactive [4, 5]. It has been
established that location of US induced changes is defined
both by the RD structure in the sample after irradiation
and electronic state of the corresponding electroactive
centre. It is noteworthy that the Hall measurements of EPh
characteristics in the papers [4, 5] were performed only in
one direction of temperature changes – when heating
from 100 to 300 K. At the same time, in cyclic
investigations of the temperature dependences for the
charge carrier concentration n(T) – both when cooling
the sample n(Т↓) and heating it n(Т↑) – there revealed
was a specific divergence (hysteresis) of temperature
characteristics ∆n(Т) = n(Т↓) – n(Т↑) [6]. The found
divergence ∆n(Т) considerably exceeds experimental
errors and is not observed in respective initial
unirradiated samples. Similar hysteresis n(Т) in annealed
silicon samples (5 hours at 400 ºС) was related in the
paper [7] with formation of centres characterized by a
considerable time of establishment of thermodynamic
equilibrium distribution over various charge states,
which results in appearance of residual conductivity.
In this work, for further ascertaining the
mechanism of ultrasound influence on the radiation
complexes, we performed experimental investigations of
EPh characteristics of γ-irradiated silicon samples n-Si–
Fz in different regimes, namely: stationary, after US
treatment (UST), and dynamical, in-situ US loading
(USL). The goal of the paper is to study and analyze the
mechanism of UST and USL influence on the
temperature hysteresis of charge carrier concentration
n(T) in the silicon crystals n-Si–Fz.
2. Experimental
For investigations, we chose n-type dislocationless
silicon crystals grown using the zone melting method n-
Si–Fz, with electron concentration n300K =
(4.4±0.3)∙1013 cm-3, specific resistance ρ300K =
140 Ohm∙сm and background impurities NO <
5.0∙1015 cm-3 and NC ≈ 1.0∙1016 cm-3. Samples were
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 375-378.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
376
irradiated by γ-quanta of 60Со with the dose D ~ 108 rad
≈ 1.93∙1017 γ /cm2 under room temperature, and then
isochronically annealed to Т = 280 °С (with a step
40 °С, duration 20 min). A choice was validated for the
annealed samples (Тann = 280 °С), in comparison with
unannealed samples, effective hysteresis square ∆n(Т) is
a little increased (Fig. 1, curves 2, 3).
Our measurements of n(Т) and μ(Т) were
performed on the crystallographically-orientated samples
with dimensions 0.7×2.0×9.3 mm by using the Hall
effect method in the direct current regime (I || [110]) and
constant magnetic field 0.45 Tl (B || [1ī0]) directed along
the perpendicular to the sample. In consecutive order,
the initial samples were investigated after γ-irradiation
both before and after UST, as well as during USL
processing within the temperature range 100–300 K.
Used longitudinal acoustic waves were radiated along
the normal to the sample lengthwise to the magnetic
field B (frequency f = 5–15 МHz, intensity W ≤ 0.1–
2 W/сm2, UST duration t ≈ 104 s). The rate of
temperature changes both when cooling and heating the
samples was approximately equal to ~3 K/min.
3. Results
In the initial samples, the dependence n(Т) indicates full
ionization of shallow donors – doping phosphorus
impurity within the temperature range 100 to 300 K, n ≈
4∙1013 сm-3 (Fig. 1, curve 1). In the irradiated samples,
when the temperature slows down n(Т↓) sharply
decreases, which is related with the acceptor-type RDs
that freeze out the free charge carriers. Moreover, the
characteristic slope of the function lg n(1/T) for two
directions of temperature changes differs, as a result the
certain temperature hysteresis n(Т) appears. This can
mean that the destiny of electroactive defects in a
definite charge state at the same temperature Ті < 200 K,
but for different directions of temperature changes –
cooling and heating, respectively, is distinct. After UST
of samples, one can observe the following change of the
n(Т) shape: curve n(Т↓) is shifted a little, becomes more
steep and approaches to n(Т↑), that after UST didn’t
change practically, as a result ∆n(Т) is narrowed a little
(Fig. 1, curves 4, 5). After continuous relaxation during
several days, the dependences n(Т) return to the
preliminary state that took place before UST (Fig. 1,
curves 2, 3). It should be emphasized here that similar
UST of the initial unirrradiated samples (Fig. 1, curve 1)
not containing any metastable RDs didn’t lead to
noticeable changes in n(Т). In contrast to UST influence,
in the presence of dynamic USL the n(Т) hysteresis was
increased (Fig. 2, curves 6, 7), and when US is turned
off the n(Т) value “momentary” (quicker than the next
measurement duration – several seconds) returns to the
initial state (Fig. 2, curves 2, 3). It is obvious that the
direction of temperature changes plays an important
role: the largest acoustostimulated (АS) changes of n(T)
happen when cooling the sample, while when heating
these are hardly observed.
4 6 8 10
1017
1018
1019
1020
n
, m
-3
1000/T, (K-1)
1
2
3
5
4
Fig. 1. Temperature dependence of the free electron
concentration in γ-irradiated thermally treated silicon samples
n-Si–FZ after US treatment. 1 – initial state of the samples
before irradiation and treatments; 2, 3 – after γ-irradiation and
thermal annealing at 280 ºС; 4, 5 – after γ-irradiation and
annealing at 280 ºС and after UST; 2, 4 – when cooling, 3, 5 –
when heating. Arrows point the direction of temperature
changes.
6 8 10
1017
1018
1019
1020
n
, m
-3
1000/T, (K-1)
2
3
6
7
T
T
Fig. 2. Temperature dependence of the free electron
concentration in γ-irradiated thermally treated silicon samples
n-Si–FZ in the US loading regime. 2, 3 – after γ-irradiation and
thermal annealing at 280 ºС; 6, 7 – after γ-irradiation and
annealing at 280 ºС and in the US loading regime; 2, 6 – when
cooling; 3, 7 – when heating.
4. Discussion
The analogous hysteresis of n(T) that was observed in
this work in γ-irradiated samples, in the paper [7] for the
thermally treated samples was related with the structural
reconstruction of the thermodonor TD-1 (Ес–0.23 eV),
as a result of the thermostimulated joining of an
additional oxygen atom (molecule). It should be noted
that at making use of annealing regime of our samples
(low values of duration and annealing temperature), as
known, the thermodonors is not created yet [8]. Thus,
another mechanisms and defects are dominant for ∆n(Т).
To explain the hysteresis effect n(T), one needs to
take into consideration that electroconductivity of the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 375-378.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
377
investigated samples is determined by electroactive
defects manifesting the metastable character. The
position of such a defect in the crystal lattice is
especially determined by the sample temperature and
deformation fields formed by background impurities of
surroundings and/or external influence, for example by
US action. And transformation into another metastable
state happens via some jump [9]. Besides, the change of
defect position in crystalline lattice is accompanied by
the corresponding change of the charge state (Jan-Teller
effect) and the corresponding change in the centre
activation energy Еа [10, 11]. Let us analyze which
defects would be responsible for the hysteresis n(T). In
accord with the literature data [9, 12-14], in n-Si–Fz
samples processed in the used γ-irradiation regime, the
main RDs are as follows:
1. “Ps-V” – E-centres forming the level (Ес–0.4 eV)
with the concentration NE ≥ 1013 cm-3. Taking into
consideration the investigated temperature range and the
defect energetics, one can assume that these centres were
not displayed in our experiments.
2. “Ps-Ci” – centres in silicon with a low carbon
content and high phosphorus content form in the
forbidden band such levels (0.30, 0.29, 0.23, 0.21 eV)
[9, 12-14]. The levels (Ес–0.23), (Ес–0.21) eV agree with
n(Т) experimental dependences slope. However, taking
into consideration that NC >> NР in our samples, the
probability of Ps-Ci-centres formation is quite low,
therefore, it seems that these centres are hardly
responsible for АS hysteresis of n(T).
3. “Сs-Ci” – centres. At a sufficiently high carbon
concentration, formation of the bistable defects Сs-Ci
with a proper level (Ес–0.16) eV is possible [9, 12-14].
In this case, the nature of bistability is determined by a
weak bond between Ci and Сs atoms and possible
migration of the Ci atom at high temperatures [13].
Estimations of the possible concentration for levels and
their energies allow contribution to AS effects.
4. “V-О” – А-centres are also present in the initial
(after irradiation) samples. Our estimations show that for
n-Si–Fz with NO < 5.0∙1015 cm-3 their concentration NА ≤
1012 сm-3, and with lowering the temperature down to the
values Т < 150 K their contribution to n(T) is increased.
However, formation of these centres is more probable in
the samples with the high oxygen content grown using
the Czochralsky method.
5. Divacancy V2-centres are considered as the main
RDs that define the main electrophysical and optical
properties in γ-irradiated silicon samples. Their
concentration
2VN ≥ 1013 сm-3 [15], and they can be in
different dimensional and charge states. At room tem-
perature, the divacancy has one negative charge (V2
–),
and with following temperature lowering to nitrogen
ones Т < 150 K, as a result of trapping the free electrons,
they acquire double negative charge V2
2–. As it is known,
V2
2– is characterized by the level Ес–(0.21…0.23) eV in
the forbidden band [12, 13], which corresponds to the
conditions of our experiment. Divacancies V2 can be the
main defects responsible for the hysteresis effect n(T),
besides, moreover at the annealing temperature 280 ºС
they are in the unstable state. Therefore, like to [4, 5], we
consider divacancies as the most probable acoustoactive
centres.
Certainly, when the centre recharges, in particular
at the temperature change of the sample, the energy level
of the defect in the band ЕRD is changed discretically.
Nevertheless, in the transitional region in some
temperature range, while simultaneous statistical
distribution of the defects over the different states is
present, the smooth slope change of n(T) can be
observed in experiments, too. Another example of
“smooth” change of ЕRD that is possible in “special”
conditions arises when changing the short distance atom
surroundings of the defect [16]. Diffusion approaching
the background impurity atom (oxygen, carbon, nitrogen)
to RD is caused by local deformation disfiguration of the
crystal lattice and is accompanied with disturbance of
the defect energy level in the forbidden band. The
differences between UST and USL influences on n(Т)
(Figs 1 and 2, respectively) indicate various mechanisms
of the AS transformation of the crystal radiation defects.
Indeed, UST is the highly intensive treatment of
samples (W ≈ 2 W/сm2) by means of US oscillations,
which takes place at room temperature (approximately
320–330 K). The US role becomes comprehensible as
the stimulated factor intensifying the deformation
gradient in the vicinity of the vacancy complex, on the
one hand, and increases the diffusion mobility of
impurity atoms, on the other hand. As a result of this
“temporary approaching-joining” of impurity atoms
from some surroundings, the part of divacancies is
transformed in the divacancy complexes V2 → V2
2––Х
(where Х is N, О, or С); herewith their energy level is
given place into the forbidden band. In particular,
joining carbon to the divacancy shifts up the acceptor
level energy by the value Е1 = 0.035 eV [17].
At the same time, the USL influence is investigated
when measuring the EPh characteristics within the
whole temperature range (250 to 100 K) and at
considerably lower US powers W < 0.2 W/сm2. Under
these conditions, the AS efficiency of the diffusion
processes is already considerably reduced. In our
opinion, another AS processes are dominant in this case,
namely, AS acceleration of RDs transition from one
metastable state to another one. Really, the position of
metastable defects, that are stabilized by background
impurities in surrounding crystal lattice, in the presence
of USL influence becomes unstable. As a result of
compression-extension of the crystal lattice by
deformation fields of the acoustic wave, some distortion
of the crystal cubic symmetry occurs. It results in
reconstruction and orientation redistribution of RD-
dipoles, and, consequently, to additional perturbation of
the centre energy position. USL in the cooling regime
leads to additional ionization V2
2––Х, which causes the
acceptor RD level to be emptied, and the charge carrier
concentration inside the conduction band increases.
When cooling under USL conditions, the acoustic wave
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 375-378.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
378
delays freezing the carriers, which keeps a little higher
electron concentration inside the conduction band,
herewith the acceptor level remains less ionized (with a
low quantity of charge carriers), and the mobility
remains some higher due to less scattering by defects. In
the case of acoustic heating the sample, contrariwise, μ
would be less than without USL. When heating, USL
accelerates thermal activation of carriers from acceptor
levels and increases n in the band.
The obtained results affirm that US actively affect
on the RD state in n-Si–Fz. It is related with
transformation of the defect centres due to elastic
perturbation of their energy position. Moreover, UST
and USL actions on RDs provide different tendencies in
EPh parameter changes – narrowing the temperature
hysteresis n(Т) at UST and their widening at USL, and it
is defined by the initial (on the moment of the US
action) state of the metastable defects.
5. Conclusions
Thus, to explain the differences between impacts of US
treatment and US loading on the EPh characteristics of
n-Si–Fz, we suppose that: a) US treatment of long
duration for silicon samples at high temperatures
(>320 K) results in residual diffusion modification of the
impurity-defect crystal system, which is caused by
perturbation of the RD level energy position (divacancy,
Ps-Ci centre) inside the band in the consequence of
temporary approaching-capture of a background
impurity atom (oxygen, carbon, nitrogen). It corresponds
to the Jellison model and could be related with reverse
relaxation of the non-equilibrium conduction in the
result of internal reverse defect modification; b) US
dynamic influence at low temperatures (<200 K) is
reversible and caused by AS deformation change in the
metastable defect concentration distribution between
different configuration and energy states as well as
respective distribution of the carrier concentration over
these levels.
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