Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the co...
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| Datum: | 2009 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118849 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |