Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxi...
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| Date: | 2008 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118855 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The review concentrates on the analysis of the RF hydrogen plasma effect on
thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern
basis of micro- and nanoelectronics. The especial attention is paid to athermic
mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si
nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing
of vacancy defects and the implanted impurity activation in a subsurface implanted
silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured
light emitting materials. |
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