Electron-electron drag in crystals with multivalley band
Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon.
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| Date: | 2009 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118864 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Mobility of electrons in multivalley bands of Si and Ge is considered with due
regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility
at low temperatures. This effect is clearer pronounced in germanium than in silicon. |
|---|